Disclaimer: ChinaDaily.com(dba China Daily Information) is in no way affiliated with China Daily Newspaper or chinadaily.com.cn
Home Jobs Offered Jobs Wanted Personals Language Massage & Escort Housing Services Biz Opportunities
You are here:
Shanghai > Biz Opportunities > Sale & Buy
Post Login Register Support


Post# A313439

Wolfspeed’s CGHV96100F2

Posted On: Tuesday, 30 May, 2017
Reply to: market@rayemit.com
Wolfspeed’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.http://www.rayemit.com »

Previous posting
More posting in Sale & Buy
Next posting
More posting in Biz Opportunities

It's ok to contact this poster about other services, products or commercial interests.